Platform
ELMOS produces in a self-developed high-voltage CMOS technology. By using a modular process structure, we accomplish the highest rate of reliability and stability possible. This gives our engineers a lot of freedom when designing your ASICs. What is more, you get only the modules that you really need. This saves costs.
Process modules and additional options:
- M-Flash: Flash
- DIMOS: Driver transistors for currents of up to 10 A with low ON-resistance and a breakdown voltage of up to 120 V
- NVM: Non-volatile, electrical write and erasable memory cells (E²PROM)
- Capacitor: voltage-independent poly-active capacitors
- Power-Metal: Additional metallization for power applications
- 2 layer, 3 layer, 4 layer metal: 2nd, 3rd and 4th metal layer for large-scale integrated logic
Distinctive features by using SOI technology:
- High-scale integration of power elements, analog and digital components
- Increased robustness regarding high temperatures, leak currents and latch-up
- Modular approach = compatible with the basic process
- Increased design possibilities such as multipotential and integrated free-wheeling diodes etc.
- Access to MEMS technologies: Surface micro-mechanics, membrane and meander technologies